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HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - Current previously published June 2000

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previously published June 2000

SEMI MF391 –– Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage

1-0698 (Reapproved 0615)

SEMI C93-0217 (preliminary status removed)

HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - Current previously published June 2000This Standard was technically approved by the HB LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 19, 2015. Available at www. semiviews. org and www. semi. org in June 2015. Crystalline sapphire wafers (CSW) are used as substrates for manufacturing compound semiconductor devices, in particular high brightness light emitting diodes (HB LED). In SEMI HB1 a multitude of

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