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22 nm (表 R1-3)世代のデバイスにおけるシリコンアニールウェーハの幾何学的，電気的，化学的および構造的特性を包括している。
This Test Method provides detailed procedures for characterizing silicon wafers GOI using the TZDB method
1-0701 (technical revision)
SEMI E87-0726 (technical revision)
P02600 - SEMI P26 - Parameter Checklist for Photoresist Sensitivity Measurement StdPbc-0521 22 nm (表 R1-3)世代のデバイスにおけるシリコンアニールウェーハの幾何学的，電気的，化学的および構造的特性を包括している。This checklist was technically approved by the Global Micropatterning Committee and is the direct responsibility of the Japanese Micropatterning Committee. Current edition approved by the Japanese Regional Standards Committee on April 28, 2003. Initially available at www. semi. org June 2003; to be published July 2003. Originally published in 1996. NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain